HN2S03T(TE85L)

Fabricant :

Toshiba Semiconductor and Storage

catégorie de produit :

Diodes - Redresseurs - Matrices

Current - Average Rectified (Io) (per Diode) :

50mA

Current - Reverse Leakage @ Vr :

500 nA @ 20 V

Diode Configuration :

2 Independent

Diode Type :

Schottky

Mounting Type :

Surface Mount

Operating Temperature - Junction :

125°C (Max)

Package / Case :

4-SMD, Flat Leads

Product Status :

Obsolete

Reverse Recovery Time (trr) :

-

Speed :

Small Signal =< 200mA (Io), Any Speed

Supplier Device Package :

TESQ

Voltage - DC Reverse (Vr) (Max) :

20 V

Voltage - Forward (Vf) (Max) @ If :

550 mV @ 50 mA