NESG3031M14-T3-A

Fabricant :

Rochester Electronics, LLC

catégorie de produit :

Transistors - Bipolaire (BJT) - RF

Current - Collector (Ic) (Max) :

35mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

220 @ 6mA, 2V

Frequency - Transition :

-

Gain :

7.5dB ~ 16dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

0.6dB ~ 1.5dB @ 2.4GHz ~ 5.8GHz

Operating Temperature :

-

Package / Case :

4-SMD, Flat Leads

Power - Max :

150mW

Product Status :

Obsolete

Supplier Device Package :

4L2MM, M14

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

4.3V