MT3S20TU(TE85L)

Fabricant :

Toshiba Semiconductor and Storage

catégorie de produit :

Transistors - Bipolaire (BJT) - RF

Current - Collector (Ic) (Max) :

80mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 50mA, 5V

Frequency - Transition :

7GHz

Gain :

12dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1.45dB @ 20mA, 5V

Operating Temperature :

150°C (TJ)

Package / Case :

3-SMD, Flat Lead

Power - Max :

900mW

Product Status :

Last Time Buy

Supplier Device Package :

UFM

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

12V