HFA3127RZ96

Fabricant :

Renesas Electronics America Inc

catégorie de produit :

Transistors - Bipolaire (BJT) - RF

Current - Collector (Ic) (Max) :

65mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 10mA, 2V

Frequency - Transition :

8GHz

Gain :

-

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

3.5dB @ 1GHz

Operating Temperature :

175°C (TJ)

Package / Case :

16-VFQFN Exposed Pad

Power - Max :

150mW

Product Status :

Active

Supplier Device Package :

16-QFN (3x3)

Transistor Type :

5 NPN

Voltage - Collector Emitter Breakdown (Max) :

12V