NE851M33-A

Fabricant :

CEL

catégorie de produit :

Transistors - Bipolaire (BJT) - RF

Current - Collector (Ic) (Max) :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 5mA, 1V

Frequency - Transition :

4.5GHz

Gain :

-

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1.9dB ~ 2.5dB @ 2GHz

Operating Temperature :

150°C (TJ)

Package / Case :

3-SMD, Flat Lead

Power - Max :

130mW

Product Status :

Obsolete

Supplier Device Package :

3-SuperMiniMold (M33)

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

5.5V