2DB1182Q-13

Fabricant :

Diodes Incorporated

catégorie de produit :

Transistors - Bipolaire (BJT) - Simple

Current - Collector (Ic) (Max) :

2 A

Current - Collector Cutoff (Max) :

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 500mA, 3V

Frequency - Transition :

110MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power - Max :

10 W

Product Status :

Active

Supplier Device Package :

TO-252-3

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

800mV @ 200mA, 2A

Voltage - Collector Emitter Breakdown (Max) :

32 V