2SA1020-Y(T6FJT,AF

Fabricant :

Toshiba Semiconductor and Storage

catégorie de produit :

Transistors - Bipolaire (BJT) - Simple

Current - Collector (Ic) (Max) :

2 A

Current - Collector Cutoff (Max) :

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 500mA, 2V

Frequency - Transition :

100MHz

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 Long Body

Power - Max :

900 mW

Product Status :

Obsolete

Supplier Device Package :

TO-92MOD

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 1A

Voltage - Collector Emitter Breakdown (Max) :

50 V