HUF76139S3ST

Fabricant :

Rochester Electronics, LLC

catégorie de produit :

Transistors - FET, MOSFET - Unique

Current - Continuous Drain (Id) @ 25°C :

75A (Tc)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

78 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

2700 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Power Dissipation (Max) :

165W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

7.5mOhm @ 75A, 10V

Supplier Device Package :

TO-263AB

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3V @ 250µA