HUF76407D3

Fabricant :

Rochester Electronics, LLC

catégorie de produit :

Transistors - FET, MOSFET - Unique

Current - Continuous Drain (Id) @ 25°C :

12A (Tc)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

11.3 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

350 pF @ 25 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Power Dissipation (Max) :

38W (Tc)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

92mOhm @ 13A, 10V

Supplier Device Package :

I-PAK

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±16V

Vgs(th) (Max) @ Id :

3V @ 250µA