HUF76113SK8

Fabricant :

Rochester Electronics, LLC

catégorie de produit :

Transistors - FET, MOSFET - Unique

Current - Continuous Drain (Id) @ 25°C :

6.5A (Ta)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

21 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

585 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-VFSOP (0.091", 2.30mm Width)

Power Dissipation (Max) :

2.5W (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

30mOhm @ 6.5A, 10V

Supplier Device Package :

US8

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3V @ 250µA