HUF75631P3

Fabricant :

Rochester Electronics, LLC

catégorie de produit :

Transistors - FET, MOSFET - Unique

Current - Continuous Drain (Id) @ 25°C :

33A (Tc)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

79 nC @ 20 V

Input Capacitance (Ciss) (Max) @ Vds :

1220 pF @ 25 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-220-3

Power Dissipation (Max) :

120W (Tc)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

40mOhm @ 33A, 10V

Supplier Device Package :

TO-220-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA