R8007AND3FRATL

Fabricant :

Rohm Semiconductor

catégorie de produit :

Transistors - FET, MOSFET - Unique

Current - Continuous Drain (Id) @ 25°C :

7A (Tc)

Drain to Source Voltage (Vdss) :

800 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

28 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

850 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation (Max) :

140W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

1.6Ohm @ 3.5A, 10V

Supplier Device Package :

TO-252

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

5V @ 1mA