FQA19N20L

Fabricant :

onsemi

catégorie de produit :

Transistors - FET, MOSFET - Unique

Current - Continuous Drain (Id) @ 25°C :

25A (Tc)

Drain to Source Voltage (Vdss) :

200 V

Drive Voltage (Max Rds On, Min Rds On) :

5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

35 nC @ 5 V

Input Capacitance (Ciss) (Max) @ Vds :

2200 pF @ 25 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-3P-3, SC-65-3

Power Dissipation (Max) :

190W (Tc)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

140mOhm @ 12.5A, 10V

Supplier Device Package :

TO-3P

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 250µA