TK16J60W,S1VE

Fabricant :

Toshiba Semiconductor and Storage

catégorie de produit :

Transistors - FET, MOSFET - Unique

Current - Continuous Drain (Id) @ 25°C :

15.8A (Ta)

Drain to Source Voltage (Vdss) :

600 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

38 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1350 pF @ 300 V

Mounting Type :

Through Hole

Operating Temperature :

150°C

Package / Case :

TO-3P-3, SC-65-3

Power Dissipation (Max) :

130W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

190mOhm @ 7.9A, 10V

Supplier Device Package :

TO-3P(N)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

3.7V @ 790µA