TK16A60W5,S4VX

Fabricant :

Toshiba Semiconductor and Storage

catégorie de produit :

Transistors - FET, MOSFET - Unique

Current - Continuous Drain (Id) @ 25°C :

15.8A (Ta)

Drain to Source Voltage (Vdss) :

600 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

Super Junction

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

43 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1350 pF @ 300 V

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-220-3 Full Pack

Power Dissipation (Max) :

40W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

190mOhm @ 7.9A, 10V

Supplier Device Package :

TO-220SIS

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

3.7V @ 1.5mA